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publication number s75ws-p_00 revision 02 issue date september 6, 2006 s75ws-p based mcp/pop products s75ws-p based mcp/pop products cover sheet 1.8 volt-only x16 simultaneous read/write, burst mode flash (nor interface) s30ms-p (nand interface) ornand ? flash psram type 2 data sheet (advance information) notice to readers: this document states the current technical specifications regarding the spansion product(s) described herein. each product described herein may be designated as advance information, preliminary, or full production. see notice on data sheet designations for definitions.
ii s75ws-p based mcp/pop products september 6, 2006 s75ws-p_00-02 data sheet (advance information) notice on data sheet designations spansion inc. issues data sheets with advance information or preliminary designations to advise readers of product information or intended specifications throughout the product life cycle, including development, qualification, initial production, and full production. in all cases, however, readers are encouraged to verify that they have the latest information before finalizing their design. the following descriptions of spansion data sheet designations are presented here to highlight their presence and definitions. advance information the advance information designation indicates that spansion inc. is developing one or more specific products, but has not committed any design to production. information presented in a document with this designation is likely to change, and in some cases, development on the product may discontinue. spansion inc. therefore places the following conditions upon advance information content: ?this document contains information on one or more products under development at spansion inc. the information is intended to help you evaluate this product. do not design in this product without contacting the factory. spansion inc. reserves the right to change or discontinue work on this proposed product without notice.? preliminary the preliminary designation indicates that the product development has progressed such that a commitment to production has taken place. this designation covers several aspects of the product life cycle, including product qualification, initial production, and the subsequent phases in the manufacturing process that occur before full production is achieved. changes to the technical specifications presented in a preliminary document should be expected while keeping these aspects of production under consideration. spansion places the following conditions upon preliminary content: ?this document states the current technical specifications regarding the spansion product(s) described herein. the preliminary status of this document indicates that product qualification has been completed, and that initial production has begun. due to the phases of the manufacturing process that require maintaining efficiency and quality, this document may be revised by subsequent versions or modifications due to changes in technical specifications.? combination some data sheets contain a combination of products with different designations (advance information, preliminary, or full production). this type of document distinguishes these products and their designations wherever necessary, typically on the first page, the ordering information page, and pages with the dc characteristics table and the ac erase and program table (in the table notes). the disclaimer on the first page refers the reader to the notice on this page. full production (no designation on document) when a product has been in production for a period of time such that no changes or only nominal changes are expected, the preliminary designation is removed from the data sheet. nominal changes may include those affecting the number of ordering part numbers available, such as the addition or deletion of a speed option, temperature range, package type, or v io range. changes may also include those needed to clarify a description or to correct a typographical error or incorrect specification. spansion inc. applies the following conditions to documents in this category: ?this document states the current technical specifications regarding the spansion product(s) described herein. spansion inc. deems the products to have been in sufficient production volume such that subsequent versions of this document are not expected to change. however, typographical or specification corrections, or modifications to the valid combinations offered may occur.? questions regarding these document designations may be directed to your local amd or fujitsu sales office.
this document contains information on one or more products under development at spans ion llc. the information is intended to he lp you evaluate this product. do not design in this product without contacting the fact ory. spansion llc reserves the right to change or discontinue work on this proposed product without notice. publication number s75ws-p_00 revision 02 issue date september 6, 2006 features ? power supply voltage of 1.7 to 1.95v ? flash access time: 80 ns (nor), 25 ns (ornand) ? flash burst frequencies: 66 mhz, 80 mhz, 108 mhz ? psram access time: 70 ns, 20 ns (page) ? psram burst frequency: 66 mhz, 80 mhz, 104 mhz ? package: ? 12 x 12 mm pop ? 9 x 12 mm, 115-ball mcp ? operating temperature ? ?25c to +85c (wireless) the s75ws series is a product line of mcps or pops, and consists of: ? one s29ws-p nor flash memory die ? one or more s30ms-p nand inte rface ornand flash memory die ? psram type 2 for detailed specifications, please refer to the individual data sheets . s75ws-p based mcp/pop products 1.8 volt-only x16 simultaneous read/write, burst mode flash (nor interface) s30ms-p (nand interface) ornand ? flash psram type 2 data sheet (advance information) document publication identification number (pid) s29ws-p s29ws-p_00 256mb psram type 2 psram_24 s30ms-p s30ms-p_00
2 s75ws-p based mcp/pop products s75ws-p_00_02 september 6, 2006 data sheet (advance information) 1. product selector guide 2. mcp block diagram device model number flash density (mb) psram density (mb) ornand density (mb) flash speed (mhz) psram speed (mhz) psram supplier package s75ws256pefkff lw 256 256 512 66 104 type 2 amb128: pop 12 x12 x 1.15 mm s75ws256pefjf5 vs 80 fmc115: mcp 12 x 9 mm a0-a2 3 a0-a2 3 rdy rdy dq0-dq15 clk clk avd# avd# f-ce# ce# oe# oe# f-r s t# # t e s e r v ss f-acc acc f1-wp# wp# we# we# vcc f-vcc vccq a0-a2 3 wait# clk avd# r1-ce# ce# oe# r-lb# lb# r-ub# ub# we# r-cre cre v ss vcc r-vcc vccq i/o0-i/o15 i/o0-i/o15 n-ry/by# rb# n-cle cle n-ce# ce# n-ale ale v ss n-v ss n-re# # e r n-pre n-wp# wp# n-we# we# vcc n-vcc dq0-dq15 dq0-dq15 w s 256p fl as h memory 256 m b utram memory m s 512p x16 ornand memory v ss pre
s75ws-p_00_02 september 6, 2006 s75ws-p based mcp/pop products 3 data sheet (advance information) 3. pop block diagram a0-a2 3 wait# rb# acc ws256p flash memory 256mb utram memory ms512p x16 ornand memory a0-a2 3 f-rdy/r-wait clk avd# f-ce# oe# f-r s t# f-acc f1-wp# we# a0-a2 3 rdy clk avd# ce# oe# re s et# acc wp# we# dq0-dq15 v ss q vcc vccq v ss dq0-dq15 v ss q f-vcc vccq v ss dq0-dq15 v ss q vcc vccq v ss r-vcc r-v ss pre vcc v ss i/o0-i/o15 i/o0-i/o15 n-pre n-vcc r-clk r-ce# r-lb# r-ub# r-mr s clk avd# ce# oe# lb# ub# we# mr s n-ry/by# n-cle n-ce# n-ale n-re# n-wp# n-we# cle ce# ale re# wp# we#
4 s75ws-p based mcp/pop products s75ws-p_00_02 september 6, 2006 data sheet (advance information) 4. connection diagrams 4.1 12 x 12 mm pop 3 2910 5 47 68 1 13 12 15 14 17 16 18 11 a0 nc a10 a12 a4 a2 n-vcc a6 a8 nc a-16 f-vcc a20 a18 nc a22 nc a14 b d e f g h j k l m n p r t u v a c rfu nc a11 a13 a5 a3 vss a7 a9 nc a17 vss a21 a19 nc rfu nc a15 r-vss rfu r-vss rfu a1 rfu a23 rfu rfu r-mrs rfu rfu rfu rfu n-we# rfu vss rfu r-vcc avd# rfu r-ce# we# oe# n-ce# rfu rfu rfu n-cle n-ale r-clk f-clk n-re# n-ry/by# rfu f-ce# r-vss f-rdy/ r-wait vss rfu r-vcc n-vcc r-vcc f-vcc dq15 dq14 dq1 dq0 vssq vccq vssq vccq rfu rfu n-pre rfu nc nc nc nc rfu nc f-acc f-rst# dq10 dq12 dq8 vccq r-ub# nc vccq dq6 dq2 dq4 nc rfu nc r-lb# legend all shared no connect nor flash only reserved for future use psram only flash shared only ornand flash only nor/psram shared only rfu n-wp# f-wp# dq11 dq13 dq9 vssq rfu vssq dq7 dq3 dq5 rfu rfu
s75ws-p_00_02 september 6, 2006 s75ws-p based mcp/pop products 5 data sheet (advance information) 4.2 9 x 12 mm, 115-ball mcp 4.3 special handling instructions for fbga package special handling is required for flash memory products in fbga packages. flash memory devices in fbga packages may be damaged if exposed to ultrasonic cleaning methods. the package and/or data integrity may be compromised if the package body is exposed to temperatures above 150c for prolonged periods of time. 3 2910 5 47 6 8 1 nc nc nc nc b d e f g h j k l m n p a c nc nc nc nc avd# io12 nc f-wp# n-ry/ by# io11 io10 a 3 n-re# a15 io9 a2 n-ce# a21 io 8 a1 n-vcc a22 n-vcc a0 n-v ss a16 n-v ss f1-ce# n-cle# r-mr s io7 r-ce# n-ale# v ss io6 n-wp# n-we# io4 io5 rfu nc io 3 pre nc nc nc nc nc nc nc nc legend no connect nor fl as h only re s erved for f u t u re u s e p s ram only nand fl as h only nor fl as h/ p s ram s h a red only v ss clk a7 r-lb# a6 r-ub# a5 a1 8 a4 a17 v ss dq1 oe# dq9 dq0 dq10 dq 8 dq2 rfu v ss rfu io15 f-acc we# f-r s t# rfu rdy a20 rfu a2 3 rfu rfu dq 3 dq4 f-vcc r-vcc dq11 rfu f-vcc io0 io14 io1 3 a 8 a11 a19 a12 a9 a1 3 a10 a14 dq6 rfu dq1 3 dq15 dq12 dq7 dq5 dq14 io1 io2
6 s75ws-p based mcp/pop products s75ws-p_00_02 september 6, 2006 data sheet (advance information) 4.4 look-ahead ballout for future designs 3 2910 5 47 68 1 13 12 15 14 17 16 18 11 a0 nc a10 a12 a4 a2 f-vcc2 a6 a8 nc a-16 f-vcc1 a20 a18 nc a22 nc a14 b d e f g h j k l m n p r t u v a c rfu nc a11 a13 a5 a3 f-vss a7 a9 nc a17 f-vss a21 a19 nc rfu nc a15 r-vss/ nc rfu r-vss/ nc rfu a1 rfu a23 a24 d-ba1/ p2-cre/s1-cs2 d-ba0/ p1-cre a25 a26 d-cas#/ f-cas# d-ras#/ f-ras# n-we# a27 f-vss d-we# r-vcc f-adv#/ p-adv# d2-cs#/ p2-ce# d1-cs#/ p1-ce# f-we#/ p-we#/s-we# f-oe#/ p-oe#/s-oe# f4-ce#/ n1ce#/p2-cs2 f3-ce#/ n2ce#/p1-ce2 d-clk# f-clk# n-cle n-ale d-clk/ p-clk f-clk n-re# n-rdy/ bsy# f2-ce#/ n3ce# f1-ce# r-vss f-wait/ p-wait/p-rdy f-vss f-dpd r-vcc f-vcc2 r-vcc f-vcc1 dq15 dq14 dq1 dq0 vssq vccq vssq vccq n-res#/ nc d-cke n-pre f-cke nc nc nc nc rfu nc f-vpp/ n-acc f-rst# dq10 dq12 dq8 vccq d-dm1/ p-ub#/ s-ub# nc vccq dq6 dq2 dq4 nc rfu nc d-dm0/ p-lb#/s-lb# legend address no connect (corner balls) data reserved for future use ground power control n-mres# n-wp2#/ f-wp2# f-wp# dq11 dq13 dq9 vssq d-dqs1 vssq dq7 dq3 dq5 rfu d-dqs0
s75ws-p_00_02 september 6, 2006 s75ws-p based mcp/pop products 7 data sheet (advance information) 5. input/output descriptions ta bl e 5 . 1 identifies the input and output package connections provided on the device. table 5.1 input/output descriptions (sheet 1 of 2) symbol signal type description ws (nor) psram ms (ornand) amax-a0 input nor flash address inputs x x dq15-dq0 i/o flash data input/output, shared between nor and ornand flash; shared with io15-io0 for ornand xx x f-ce# input nor flash chip-enable input #1. asynchronous relative to clk for burst mode. x oe# output output enable input. asynchronous relative to clk for burst mode. xx we# input write enable input. x x f-v cc power nor flash device power supply (1.7 v - 1.95v). x f-v ccq power input/output buffer power supply. x v ss ground ground x x x rfu ? reserved for future use rdy output flash ready output. indicates the status of the burst read. v ol = data valid. the flash rdy pin is shared with the wait pin of the psram. xx clk input nor flash clock, shared with clk of burst-mode psram. the first rising edge of clk in conjunction with avd# low latches the address input and activates burst mode operation. after the initial word is output, subsequent rising edges of clk increment the internal address counter. clk should remain low during asynchronous access. xx avd# input nor flash address valid input. shared with avd# of burst-mode psram. indicates to device that the valid address is present on the address inputs. v il = for asynchronous mode, indicates valid address; for burst mode, causes starting address to be latched on rising edge of clk. v ih = device ignores address inputs xx f-rst# input nor flash hardware reset input. v il = device resets and returns to reading array data x f-wp# input nor flash hardware write protect input. v il = disables program and erase functions in the four outermost sectors. x f-acc input nor flash accelerated input. at v hh , accelerates programming; automatically places device in unlock bypass mode. at v il , disables all program and erase functions. should be at v ih for all other conditions. x r-ce# input chip-enable input for psram x r-mrs input mode select register (psram). for type 2 only. x r-v cc power psram power supply x r-ub# input upper byte control (psram) x r-lb# input lower byte control (psram) x dnu ? do not use n-cle input command latch enable: the cle input signal is used to control loading of the operation mode command into the internal command register. the command is latched into the command register from the i/o port on the rising edge of the we# signal while ce# is low and cle is high. x n-ale input address latch enable: the ale signal is used to control loading of either address information or input data into the internal address/data register. address information is latched on the rising edge of we# if ce# is low and ale is high. input data is latched if ce# is low and ale is low. x
8 s75ws-p based mcp/pop products s75ws-p_00_02 september 6, 2006 data sheet (advance information) n-ce# input chip enable: the device enters a low-power standby mode when the device is in ready mode. the ce# signal is ignored when the device is in a busy state (ry/by# = l), such as during a page buffer load or erase operation, and will not enter standby mode even if the ce# input goes high. the ce# signal may be inactive during the page buffer write and page buffer load of the array data. x n-we# input write enable: the we# signal is used to control the acquisition of data from the i/o port. x n-re# output read enable: the re# signal controls serial data output. data is available t rea after the falling edge of re#. the internal column address counter is also incremented (address = address + 1) on this falling edge. x n-wp# input write protect: the wp# signal is used to protect the device from accidental programming or erasing. this signal is usually used for protecting the data during the power-on/off sequence when input signals are invalid. x table 5.1 input/output descriptions (sheet 2 of 2) symbol signal type description ws (nor) psram ms (ornand)
s75ws-p_00_02 september 6, 2006 s75ws-p based mcp/pop products 9 data sheet (advance information) 6. ordering information the order number is formed by a valid combinations of the following: s75ws 256 p ef kf f lw 0 packing type 0 = tray 2 = 7? tape and reel 3 = 13? tape and reel model number refer to the valid combinations table package descriptor depends on character 12. for a more detailed description see table 6.1 . package type & material set hf = 1.2mm mcp fbga, pb-free kf = 1.2mm pop fbga, pb-free jf = 1.4mm mcp fbga, pb-free cellularram density d0 = 128 mb process technology p = 90 nm, mirrorbit tm technology code flash density 256 = 256mb 512 = 512mb product family s71ws stacked products (mcp/pop) 1.8 v nor flash with psram table 6.1 character position descriptions character 12 character 14 character 14 description package area package ball count raw ball size h, j, or g 07x9mm56 0.35 mm 17x9 mm80 2 8x11.6 mm 64 3 8x11.6 mm 84 4 9x12 mm 84 5 9x12 mm 115 6 9x12 mm 137 7 11x13 mm 84 8 11x13 mm 115 9 11x13 mm 137 k a 11x11 mm 112 0.45 mm b 11x11 mm 112 0.50 mm d 12x12 mm 128 0.45 mm f 12x12 mm 128 0.50 mm g 14x14 mm 152 0.45 mm h 14x14 mm 152 0.50 mm j 15x15 mm 160 0.45 mm k 15x15 mm 160 0.50 mm l 17x17 mm 192 0.45 mm m 17x17 mm 192 0.50 mm
10 s75ws-p based mcp/pop products s75ws-p_00_02 september 6, 2006 data sheet (advance information) 6.1 valid combinations valid combinations list configurations planned to be supported in volume for this device. consult your local sales office to confirm availability of specific valid combinations and to check on newly released combinations. notes: 1. packing type 0 is standard. specify other options as required. 2. bga package marking omits leading s and packing type designator from ordering part number. s75ws-p valid combinations nor flash speed (mhz) psram speed (mhz) psram supplier package type package markings device package & material set package descriptor model number packing type s75ws256pef kf f lw 0, 2, 3 (note 1) s 66 104 type 2 12 x 12 mm (note 2) jf 5 vs 80 104 type 2 9 x 12 mm
s75ws-p_00_02 september 6, 2006 s75ws-p based mcp/pop products 11 data sheet (advance information) 7. physical dimensions 7.1 amb128? 128-ball 12 x 12 mm package-on-package package amb 128 jedec n/a d x e 12.00 mm x 12.00 mm package symbol min nom max note a --- --- 1.15 profile a1 0.39 --- --- ball height a2 0.55 --- 0.70 body thickness d 12.00 bsc body size e 12.00 bsc body size d1 11.05 bsc matrix footprint e1 11.05 bsc matrix footprint md 18 matrix size d direction me 18 matrix size e direction n 128 ball count n 128 maximum number of balls r 2 number of land perimeters b 0.45 0.50 0.55 ball diameter ee 0.65 bsc ball pitch ed 0.65 bsc ball pitch sd se 0.325 bsc solder ball placement depopulated solder balls 3559 \ 16-038.56 \ 4.28.6 notes: 1. dimensioning and tolerancing methods per asme y14.5m-1994. 2. all dimensions are in millimeters. 3. ball position designation per jep95, section 3.0, spp-010. 4. e represents the solder ball grid pitch. 5. symbol "md" is the ball matrix size in the "d" direction. symbol "me" is the ball matrix size in the "e" direction. n is the number of populted solder ball positions for matrix size md x me. 6 dimension "b" is measured at the maximum ball diameter in a plane parallel to datum c. 7 sd and se are measured with respect to datums a and b and define the position of the center solder ball in the outer row. when there is an odd number of solder balls in the outer row sd or se = 0.000. when there is an even number of solder balls in the outer row, sd or se = e/2 8. "+" indicates the theoretical center of depopulated balls. 9. a1 corner to be identified by chamfer, laser or ink mark, metallized mark indentation or other means. ? c3~c16, d3~d16, e3~e16, f3~f16 g3~g16, h3~h16, j3~j16, k3~k16 l3~l16, m3~m16, n3~n16, p3~p16 r3~r16, t3~t16 0.08 m c 0.15 m c a b a b d f g e c h j m l k n p t r v u 1 4 5 3 2 6 7 8 9 10 11 12 13 15 14 17 18 16 c 6 b side view 128x 7 se e1 d1 ed ee 7 sd corner pin a1 bottom view c c a d e c 0.15 (2x) b c (2x) 0.15 0.20 0.10 9 index mark top view pin a1 corner a a2 a1
12 s75ws-p based mcp/pop products s75ws-p_00_02 september 6, 2006 data sheet (advance information) 7.2 fmc115 ? 115-ball 12 x 9 mm mcp package fmc 115 jedec n/a d x e 12.00 mm x 9.00 mm package symbol min nom max note a --- --- 1.40 profile a1 0.17 --- --- ball height a2 0.96 --- 1.11 body thickness d 12.00 bsc. body size e 9.00 bsc. body size d1 10.4 bsc. matrix footprint e1 7.20 bsc. matrix footprint md 14 matrix size d direction me 10 matrix size e direction n 115 ball count b 0.35 0.40 0.45 ball diameter ee 0.80 bsc. ball pitch ed 0.80 bsc ball pitch sd se 0.40 bsc. solder ball placement a3,a4,a5,a6,a7,a8 depopulated solder balls b3,b4,b5,b6,b7,b8,c1 n3,n4,n5,n6,n7,n8 p3,p4,p5,p6,p7,p8 3603 \ 16-038.19 \ 9.6.6 notes: 1. dimensioning and tolerancing methods per asme y14.5m-1994. 2. all dimensions are in millimeters. 3. ball position designation per jep95, section 4.3, spp-010. 4. e represents the solder ball grid pitch. 5. symbol "md" is the ball matrix size in the "d" direction. symbol "me" is the ball matrix size in the "e" direction. n is the number of populted solder ball positions for matrix size md x me. 6 dimension "b" is measured at the maximum ball diameter in a plane parallel to datum c. 7 sd and se are measured with respect to datums a and b and define the position of the center solder ball in the outer row. when there is an odd number of solder balls in the outer row sd or se = 0.000. when there is an even number of solder balls in the outer row, sd or se = e/2 8. "+" indicates the theoretical center of depopulated balls. 9. a1 corner to be identified by chamfer, laser or ink mark, metallized mark indentation or other means. ?
s75ws-p_00_02 september 6, 2006 s75ws-p based mcp/pop products 13 data sheet (advance information) 8. revision history 8.1 revision 01 (may 5, 2006) initial release. 8.2 revision 02 (september 6, 2006) added the mcp s75ws256pef colophon the products described in this document are designed, developed and manufactured as contemplated for general use, including wit hout limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and m anufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a s erious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in we apon system), or (2) for any use where chance of failure is intolera ble (i.e., submersible repeater and artifi cial satellite). please note that spansion will not be liable to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. any semic onductor devices have an inherent chance of failure. you must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection , and prevention of over-c urrent levels and other abnormal operating conditions. if any products described in this document represent goods or technologies subject to certain restriction s on export under the foreign exchange and foreign trade law of japan, the us export administration regulations or the applicable laws of any oth er country, the prior authorization by the respective government entity will be required for export of those products. trademarks and notice the contents of this document are subject to change without notice. this document may contain information on a spansion product under development by spansion. spansion reserves the right to change or discontinue work on any product without notice. the informati on in this document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, no n-infringement of th ird-party rights, or any other warranty, exp ress, implied, or statutory. spansion assume s no liability for any damages of any kind arising out of the use of the information in this document. copyright ? 2006 spansion inc. all rights reserved. spansion, the spansion logo, mirrorbit, ornand, hd-sim, and combinations th ereof are trademarks of spansion inc. other names are for informational purposes only and may be trademarks of their respective owners.

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